^s.tni-con i, dna. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . pn p hig h powe r silico n transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 devices 2n621 1 2n621 2 2n621 3 maximu m rating s rating s collector-emitte r voltag e collector-bas e voltag e emitter-bas e voltag e base curren t collecto r curren t tota l powe r dissipatio n @ t a = +25 c ( " @ t c = +25 c i2 > operatin g & storag e temperatur e symbo l vce o vcb o veb o i d k p t tcp . t s [ k 2n621 1 22 5 275 2n621 2 30 0 35 0 2n621 3 35 0 40 0 6. 0 1. 0 2. 0 3. 0 3 5 -5 5 t o +20 0 uni t vd c vdc vd c ad c ad c w w c therma l characteristic s characteristic s therma l resistanc e junction-to-cas e symbo l rej c max , 5. 0 uni t "c/ w 1 ) derat e linearl y 17. 1 mw/ c fo r t a > +25 c 2 ) derat e linearl y 20 0 mw/ c fo r t c > +25 c electrica l characteristic s (t c - 25 c unles s otherwis e noted ) to-66 * *se e appendi x a fo r packag e outlin e characteristic s symbo l min . max . uni t of f characteristic s collector-emitte r breakdow n voltag e it - = 20 0 madc . f = 30-6 0 h z 2n62i i 2n621 2 2n62i 3 collector-emitte r breakdow n voltag e i c = 20 0 madc , f = 30-6 0 hz , rb h = 5 0 q 2n6 2 1 1 2n621 2 2n621 3 collector-emitte r breakdow n voltag e l c = 20 0 madc , f - 30-6 0 hz , r b e = 5 0 q , v b e = - 1 . 5 vd c 2n621 1 2n621 2 2n621 3 v(br|ce o v?? . v - ? 22 5 30 0 35 0 25 0 32 5 37 5 275 35 0 40 0 vd c vd c vd c n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n ftirnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f going t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
electrica l characteristic s (con't ) characteristic s collector-emitte r cutof f curren t v ce = 15 0 vd c collector-emitte r cutof f curren t vcf . = 250 vdc , v rf , = 1 . 5 vdc 2n6 2 1 1 vc e = 3 1 5 vdc , v be = 1. 5 vd c 2n621 2 v c e = 360 vdc , v b e = 1 . 5 vdc 2n6 2 1 3 collector-bas e cutof f curren t v c b = 27 5 vd c 2n621 1 v c b = 35 0 vd c 2n621 2 v c b = 400vd c 2n621 3 emitter-bas e cutof f curren t ve b - 6. 0 vd c symbo l ick o ice x icb o ieb o min . max . 5. 0 0. 5 0. 5 0. 5 1 5 1 5 1 5 0. 5 uni t mad c mad c mad c mad c o n characteristics ' forward-curren t transfe r rati o i c = 1 . 0 adc , v c e = 2. 8 vd c 2n62 1 1 i c = 1. 0 adc , v c h = 3.2vd c 2n621 2 i c = 1. 0 adc , ve t = 4. 0 vd c 2n621 3 i c = 1 . 0 adc , v c e = 5. 0 vd c 2n6 2 1 1 2n621 2 2n621 3 collector-emitte r saturatio n voltag e i c = 1. 0 adc , i b = 0. 1 2 5 ad c 2n621 1 2n621 2 2n621 3 base-emitte r saturatio n voltag e i c = 1. 0 adc , i b = 0. 1 2 5 ad c hf e v - ctlsat ) y bei.wt l 1 0 1 0 1 0 3 0 3 0 3 0 10 0 10 0 10 0 17 5 17 5 15 0 1. 4 1. 6 2. 0 1 4 vdc vd c dynami c characteristic s magnitud e o f commo n emitte r small-signa l short-circui t forwar d curren t transfe r rati o i c = 0. 2 adc , vc e =1 0 vdc , f = 5. 0 mh z outpu t capacitanc e v c b = 1 0 vdc , i k = 0 , 10 0 kh z < f < 1. 0 mh z hi e c llh u 4. 0 2 0 22 0 p f switchin g characteristic s turn-o n tim e v c c = 20 0 1 0 vdc ; i c = 1. 0 adc ; i b : = -0.12 5 ad c turn-of f tim e v c c = 200 1 0 vdc ; i c = 1 . 0 adc ; i b , = -0 . 1 2 5 adc , i b 2 = 0 . 1 2 5 ad c 'o n 'of f 0. 6 3. 1 (a s (a s saf e operatin g are a d c test s t c ? = +25c , 1 cycle , t = 1.0 s test l v ct . = 17. 5 vdc , i c = 2. 0 ad c test l vc e = 4 0 vdc , i c = 0.87 5 ad c test 3 vc e = 22 5 vdc , i c = 0.03 4 ad c tes t 4 vc e = 30 0 vdc , i c = 0.0 2 ad c test s vc e = 35 0 vdc . i c = 0.01 5 ad c al l type s al l type s 2n621 1 2n621 2 2n621 3 downloaded from: http:///
|
